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| NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package Features http://onsemi.com MOSFET V(BR)DSS RDS(on) MAX 100 mW @ -4.5 V -20 V 135 mW @ -2.5 V 200 mW @ -1.8 V -4.1 A ID MAX (Note 1) * FETKYt Configuration with MOSFET plus Low Vf Schottky Diode * mCOOLt Package Provides Exposed Drain Pad for Excellent * * * * * Thermal Conduction 2x2 mm Footprint Same as SC-88 Package Design Independent Pinout Provides Circuit Design Flexibility Low Profile (< 0.8 mm) for Easy Fit in Thin Environment High Current Schottky Diode: 2 A Current Rating This is a Pb-Free Device SCHOTTKY DIODE VR MAX 30 V VF TYP 0.47 V IF MAX 2.0 A Applications * Optimized for Portable Applications like Cell Phones, Digital * DC-DC Buck Circuit * Li-Ion Battery Applications * Color Display and Camera Flash Regulators MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25C Steady State TA = 85C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C PD TA = 25C 2.3 -2.3 -1.6 0.71 -20 -55 to 150 -1.9 260 W A C A Symbol VDSS VGS ID Value -20 8.0 -3.3 -2.4 -4.1 1.5 W Unit V V A G Cameras, Media Players, etc. D A S P-CHANNEL MOSFET K SCHOTTKY DIODE MARKING DIAGRAM 1 WDFN6 CASE 506AN 1 6 2 JHMG 5 3 4 G JH = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTIONS K 1 2 D D 3 4 S 6 5 Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) A A C N/C K G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 July, 2006 - Rev. 2 Publication Order Number: NTLJF3117P/D NTLJF3117P SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Value 30 30 2.0 Unit V V A THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 5 s (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Symbol RqJA RqJA RqJA Max 83 54 177 C/W Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = -250 mA ID = -250 mA, Ref to 25C TJ = 25C TJ = 85C -20 9.95 -1.0 -10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit VDS = -16 V, VGS = 0 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = -250 mA -0.4 -0.7 2.44 -1.0 V mV/C VGS = -4.5, ID = -2.0 A VGS = -2.5, ID = -2.0 A VGS = -1.8, ID = -1.6 A 75 101 150 3.1 100 135 200 mW Forward Transconductance gFS VDS = -5.0 V, ID = -2.0 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -5.0 V, ID = -1.0 A, RG = 6.0 W 5.2 13.2 13.7 19.1 ns CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = -4.5 V, VDS = -10 V, ID = -2.0 A VGS = 0 V, f = 1.0 MHz, VDS = -10 V 531 91 56 5.5 0.7 1.0 1.4 8.8 W 6.2 nC pF 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLJF3117P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -2.0 A, RG = 2.0 W 5.5 15 19.8 21.6 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = -1.0 A TJ = 25C TJ = 125C -0.75 -0.64 16.2 VGS = 0 V, dISD/dt = 100 A/ms, IS = -1.0 A 10.6 5.6 5.7 nC ns -1.0 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time tRR ta tb QRR 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.34 0.47 17 3.0 2.0 Max 0.39 0.53 20 8.0 4.5 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.22 0.40 0.22 0.11 0.06 Max 0.35 0.50 2.5 1.6 1.2 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.2 0.4 2.0 1.1 0.63 Max 0.29 0.47 20 10.9 8.4 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Capacitance Symbol C Test Conditions VR = 5.0 V, f = 1.0 MHz Min Typ 38 Max Unit pF 7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu. 9. Pulse Test: pulse width v 300 ms, duty cycle v2%. 10. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTLJF3117P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 5 -ID, DRAIN CURRENT (AMPS) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 -1.5 V -1.4 V -1.3 V -1.2 V 4 4.5 -1.7 V -1.6 V VGS = -1.9 V to -6 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -1.8 V 5 VDS 10 V 4 3 2 TJ = 25C 1 TJ = 125C 0 0 0.5 1 TJ = -55C 1.5 2 2.5 3 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.1 VGS = -4.5 V 0.09 0.08 0.07 0.06 0.05 0.04 1.0 TJ = 25C TJ = 100C 0.15 TJ = 25C VGS = -2.5 V 0.1 VGS = -4.5 V TJ = -55C 0.05 1.5 2.0 2.5 0 1 2 3 4 5 -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance versus Drain Current and Gate Voltage 10000 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = -2.2 A VGS = -4.5 V -IDSS, LEAKAGE (nA) 1.4 VGS = 0 V TJ = 150C 1000 1.2 1.0 100 TJ = 100C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTLJF3117P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS = 0 V VGS = 0 V Ciss TJ = 25C -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 5 VGS 0 VDS 5 10 15 20 Crss Coss 5 QT 4 20 -VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 16 3 VDS QGS QGD VGS 12 2 8 1 0 0 1 ID = -2.2 A TJ = 25C 2 3 4 5 QG, TOTAL GATE CHARGE (nC) 6 4 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 -Is, SOURCE CURRENT (AMPS) VDD = -15 V ID = -2.2 A VGS = -4.5 V t, TIME (ns) 100 tf tr 10 td(off) td(on) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 3 VGS = 0 V 2.5 2 1.5 1 0.5 0 0 TJ = 150C TJ = 25C 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 -ID, DRAIN CURRENT (AMPS) TC = 25C TJ = 150C SINGLE PULSE 10 ms 100 ms 1 ms 1 10 ms *See Note 2 on Page 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 dc 10 0.1 0.01 1 10 100 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTLJF3117P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1000 100 D = 0.5 0.2 0.1 *See Note 2 on Page 1 P(pk) RqJA(t) = r(t) RqJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) 10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 0.001 t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 12. Thermal Response http://onsemi.com 6 NTLJF3117P TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS 10 1.0 TJ = 85C TJ = 125C TJ = 25C TJ = -55C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 85C TJ = 125C 0.1 0.1 0.2 0.3 0.4 TJ = 25C 0.5 0.6 0.7 0.8 0.9 0.1 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage I R , REVERSE CURRENT (AMPS) 100E-3 10E-3 TJ = 125C TJ = 85C I R , MAXIMUM REVERSE CURRENT (AMPS) 1.0E+0 1.0E+0 100E-3 10E-3 TJ = 125C 1.0E-3 1.0E-3 TJ = 85C 100E-6 10E-6 100E-6 10E-6 TJ = 25C TJ = 25C 1.0E-6 0 10 20 1.0E-6 0 10 20 30 100E-9 30 100E-9 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current ORDERING INFORMATION Device NTLJF3117PT1G NTLJF3117PTAG Package WDFN6 (Pb-Free) WDFN6 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTLJF3117P PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AN-01 ISSUE C D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF PIN ONE REFERENCE E 2X 0.10 C 2X 0.10 C 0.10 C 6X 0.08 C 6X L 1 3 6X K FETKY is a registered trademark of International Rectifier Corporation. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative III III A3 A1 D2 D2 e 2X E2 6 4 A C SEATING PLANE 6X SOLDERMASK DEFINED MOUNTING FOOTPRINT 2.30 6X 0.35 0.43 4X 1 0.65 PITCH b 6X 0.25 B 2X 6X J 0.10 C A 0.05 C BOTTOM VIEW NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS http://onsemi.com 8 NTLJF3117P/D |
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